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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3480
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3480 2SK3480-S 2SK3480-ZJ 2SK3480-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
* Super low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 25 A) * Low Ciss: Ciss = 3600 pF TYP. * Built-in gate protection diode
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
100 20 50 100 84 1.5 150 -55 to +150 34 116
V V A A W W C C A mJ (TO-263, TO-220SMD) (TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.48 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15078EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan
(c)
2001
2SK3480
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 80 V VGS = 10 V ID = 50 A IF = 50 A, VGS = 0 V IF = 50 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 25 A VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 25 A VGS = 10 V RG = 0 1.5 17 2.0 34 25 27 3600 360 190 15 11 68 6.0 74 10 20 1.0 70 180 31 36 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15078EJ1V0DS
2SK3480
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 140 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
120 100 80 60 40 20 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120 140
160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID - Drain Current - A
100
ID(DC)
ID(pulse)
10 1 10 m
PW 0 s
=
10
s
10
d ite0 V) Po DC ms Lim we Lim 1 ) = ite r Di on d ss S( GS ipa RDat V tio ( n
s
1 TC = 25C Single Pulse 0.1 0.1 1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 1.48C/W
0.1 TC = 25C Single Pulse 100 1m 10 m 100 m 1 10 100 1000
0.01 10
PW - Pulse Width - s
Data Sheet D15078EJ1V0DS
3
2SK3480
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100
ID - Drain Current - A
ID - Drain Current - A
100 TA = -40C 25C 75C 150C
80 VGS =10 V 60 40 4.5 V
10
1
20
0.1 VDS = 10 V 4 5
1
2
3
0 0 1 2
Pulsed 3 4 5 VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40
100 VDS = 10 V Pulsed 10 TA = 150C 75C 25C -40C
30
ID = 50 A 25 A
1
20
0.1
10
0.01 0.01
0.1
0
1
10
100
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 4.0
VGS(off) - Gate Cut-off Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VDS = 10 V ID = 1 mA
Pulsed
80
3.0
60
2.0
40 VGS = 4.5 V 20 10 V
1.0
0 0.1
1
10
100
0 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D15078EJ1V0DS
2SK3480
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 Pulsed 60 50 40 30 20 10 0 -50 ID = 25 A 0 50 100 150 VGS = 4.5 V 10 V
ISD - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - m
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
100 VGS = 10 V 10 0V
1
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000 Coss Crss
td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
100
td(off)
td(on) 10 tr VDD = 50 V VGS = 10 V RG = 0 1 0.1 tf
100
10 0.01
VGS = 0 V f = 1 MHz 0.1 1 10 100
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
di/dt = 100 A/ns VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 80 VDD = 80 V 50 V 20 V VGS 6 10 8
VGS - Gate to Source Voltage - V
100
60
40
4
10
20 VDS 0 ID = 83 A 0 20 40 60 80 QG - Gate Charge - nC
2
1 0.1
0
1
10
100
IF - Drain Current - A
Data Sheet D15078EJ1V0DS
5
2SK3480
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000
160 140 SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 50 V RG = 25 VGS = 20 0 V IAS 34 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
120 100 80 60 40 20 0 25
100 IAS = 34 A
EAS
10 VDD = 50 V VGS = 20 0 V RG = 25 1 Starting Tch = 25C 0.01 0.1
=1
16
mJ
1
10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15078EJ1V0DS
2SK3480
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
3.00.3
2) TO-262(MP-25 Fin Cut)
1.00.5
10.6 MAX. 10.0 TYP.
4.8 MAX.
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.3 2.54 TYP. 0.50.2 2.80.2
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
3)
TO-263 (MP-25ZJ)
10 TYP. 4
1.00.5 8.50.2
4) TO-220SMD(MP-25Z)
4.8 MAX. 1.30.2 4
1.00.5
Note
10 TYP.
4.8 MAX. 1.30.2
1 1.40.2 0.70.2 2.54 TYP.
2
3
1
TY P.
2
3
1.10.4
5.70.4
R 0.5
2.54 TYP.
0.8
R
P TY
.
1.40.2 0.50.2 0.750.3 2.54 TYP.
P. TY P. .5R TY 0 .8R 2.54 TYP. 0
3.00.5
8.50.2
0.50.2
2.80.2
EQUIVALENT CIRCUIT
Drain
Note This package is produced only in Japan. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Body Diode
Gate Protection Diode
Source
Data Sheet D15078EJ1V0DS
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
7
2SK3480
* The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest p ublications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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